DocumentCode
2669709
Title
Sub-millimeter wave active imaging with silicon integrated circuits
Author
Pfeiffer, U.R.
Author_Institution
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
4
Abstract
This paper reviews recent advances in sub-millimeter wave circuit design based on silicon (SiGe and CMOS) process technologies for active imaging applications. Computed Tomography (CT) imaging results at 650 GHz, heterodyne transmission and reflection mode imaging at 820 GHz, and magnitude and phase imaging at 160 GHz in silicon process technologies are presented.
Keywords
Ge-Si alloys; computerised tomography; integrated circuit design; submillimetre wave imaging; submillimetre wave integrated circuits; CT imaging; active imaging applications; computed tomography imaging; frequency 160 GHz; frequency 650 GHz; frequency 820 GHz; magnitude imaging; phase imaging; reflection mode imaging; silicon integrated circuits; silicon process technologies; submillimeter wave active imaging; submillimeter wave circuit design; CMOS integrated circuits; Computed tomography; Detectors; Receivers; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104753
Filename
6104753
Link To Document