Title :
NBTI from the perspective of defect states with widely distributed time scales
Author :
Kaczer, B. ; Grasser, T. ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph J. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/f noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.
Keywords :
1/f noise; Poisson distribution; defect states; field effect transistors; relaxation; semiconductor device models; semiconductor device noise; semiconductor device reliability; thermal stability; 1/f noise; NBTI relaxation; Poisson defect number statistics; defect number variation; defect states; negative bias temperature instability; pFET reliability; widely distributed time scales; CMOS technology; Inverters; Monitoring; Niobium compounds; Noise measurement; Statistical distributions; Temperature; Time measurement; Titanium compounds; Voltage; 1/ƒ noise; negative bias temperature instability (NBTI); pFET; reliability; single charge events;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173224
