NBTI from the perspective of defect states with widely distributed time scales

Author

Kaczer, B. ; Grasser, T. ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph J. ; Groeseneken, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

2009

fDate

26-30 April 2009

Firstpage

55

Lastpage

60

Abstract

Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/f noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.

Keywords

1/f noise; Poisson distribution; defect states; field effect transistors; relaxation; semiconductor device models; semiconductor device noise; semiconductor device reliability; thermal stability; 1/f noise; NBTI relaxation; Poisson defect number statistics; defect number variation; defect states; negative bias temperature instability; pFET reliability; widely distributed time scales; CMOS technology; Inverters; Monitoring; Niobium compounds; Noise measurement; Statistical distributions; Temperature; Time measurement; Titanium compounds; Voltage; 1/ƒ noise; negative bias temperature instability (NBTI); pFET; reliability; single charge events;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173224

Filename

5173224