Title :
Life-stress relationship for thin film transistor gate line interconnects on flexible substrates
Author :
Martin, Thomas ; Christou, Aris
Author_Institution :
Dept. of Reliability Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.
Keywords :
Weibull distribution; flexible electronics; interconnections; semiconductor device reliability; stress-strain relations; thin film transistors; Weibull life distribution; data collection system; flexible substrate; gate line interconnect; inverse power law; life-stress model; mechanical flexing system; mechanical stress; tensile strain; thin film transistor; Active matrix organic light emitting diodes; Capacitive sensors; Liquid crystal displays; Organic materials; Power system modeling; Stress; Substrates; Thin film transistors; Uniaxial strain; Voltage control; TFT; Thin Film Transistor; flexible electronics; interconnects; stress-life model;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173235
