Title :
A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction
Author :
Yoshida, Chikako ; Kurasawa, Masaki ; Lee, Young Min ; Tsunoda, Koji ; Aoki, Masaki ; Sugiyama, Yoshihiro
Author_Institution :
Syst. LSI Dev. Labs., Fujitsu Ltd., Atsugi, Japan
Abstract :
We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force microscopy (C-AFM) observation. We found that two different local conduction modes, the percolation path and Fowler-Nordheim (F-N) tunneling, contribute to dielectric breakdown. Furthermore, the operating voltage of magnetic tunnel junctions (MTJs) for maintaining reliability over ten years against dielectric breakdown was discussed.
Keywords :
atomic force microscopy; boron compounds; cobalt compounds; electric breakdown; iron compounds; magnetic tunnelling; percolation; reliability; CAFM; CoFeB-MgO-CoFeB; Fowler-Nordheim tunneling; TDDB; conducting atomic force microscopy; dielectric breakdown mechanism; local conduction modes; magnetic tunnel junction; percolation path; reliability maintainance; size 1 nm; Atomic force microscopy; Atomic measurements; Dielectric breakdown; Dielectric measurements; Electrodes; Force measurement; Laboratories; Magnetic field measurement; Magnetic tunneling; Time measurement; C-AFM; MTJ; MgO barrier; TDDB;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173239
