Title :
Near-field spectroscopy of InAs single quantum dots at 70 K
Author :
Young-Jun Yu ; Wonho Jhe ; Arakawa, Y.
Author_Institution :
Center for Near-Field Atom-Photon Technol., Seoul Nat. Univ., South Korea
Abstract :
We demonstrate high-resolution near-field optical microscopy of self-assembled single semiconducting InAs/GaAs QDs at liquid nitrogen temperature of 70 K. We have reduced the number of excited QDs as well as the background photoluminescence (PL) from the barrier layer by simultaneously employing both shadow mask apertures produced by 100 run dielectric microspheres and a 30 (or 100) run apertured fiber probe that allow enhanced spatial and optical resolution at 70 K.
Keywords :
III-V semiconductors; gallium arsenide; image resolution; indium compounds; near-field scanning optical microscopy; photoluminescence; self-assembly; semiconductor quantum dots; 70 K; InAs-GaAs; apertured fiber probe; dielectric microspheres; liquid nitrogen temperature; near-field spectroscopy; optical resolution; photoluminescence; self-assembled semiconductor QD; shadow mask apertures; single quantum dots; spatial resolution; Apertures; Dielectric liquids; Electrochemical impedance spectroscopy; Gallium arsenide; Nitrogen; Optical microscopy; Photoluminescence; Quantum dots; Semiconductivity; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238519
