Title :
Dependency of Heterojunction Transistors´ speed on various physical parameters: A comparative study of SiGe & AlGaAs HBTs
Author :
Biswas, Priyanka ; Mannan, Rowshon Ara ; Jahan, Nusrat ; Arafat, Yeasir
Author_Institution :
Dept. of Electr., Electron & Commun. Eng., Dhaka, Bangladesh
Abstract :
It is very essential to find out how the speed of a Heterojunction Bipolar Transistor (HBT) depends on different physical parameters of the transistor as the device has become indispensable in modern ultrafast circuits. As the speed of an HBT is a very strong function of its base transit time, here we investigate its dependency on minority carrier injection, base width, base emitter voltage, peak base doping concentration and slope of base doping for an AlGaAs HBT. The analytical model of base transit time of this AlGaAs HBT is based on SIGe model as found in literature. Comparison of base transit time obtained from similar simulation for SIGe and AlGaAs HBT has been presented in this work.
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; minority carriers; semiconductor doping; AlGaAs; HBT speed; SiGe; base doping slope; base emitter voltage; base transit time; base width; heterojunction bipolar transistor speed dependency; minority carrier injection; peak base doping concentration; physical parameters; ultrafast circuits; Current density; Doping; Electric fields; Equations; Heterojunction bipolar transistors; Junctions; Mathematical model; Comparison of base transit time; Gaussian doping profile; HBT; Minority carrier injection;
Conference_Titel :
Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4820-8
DOI :
10.1109/ICEEICT.2014.6919123
