DocumentCode
2670110
Title
Lifetime analysis of photoconductive THz emitters
Author
Gobel, T. ; Schoenherr, D. ; Sydlo, C. ; Feiginov, M. ; Meissner, P. ; Hartnagel, H.L.
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich Hertz Inst., Berlin, Germany
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
3
Abstract
The durability of photoconductive Terahertz emitters significantly depends on bias voltage and/or optical power. We analyze the optimum operation conditions of photomixers for long-term performance and link the accessible signal-to-noise ratio to the photomixer lifetime via an Arrhenius analysis.
Keywords
durability; microwave photonics; photoconducting devices; terahertz wave devices; Arrhenius analysis; bias voltage; lifetime analysis; optical power; photoconductive THz emitters; photoconductive terahertz emitters; photomixer lifetime; signal-to-noise ratio; Gallium arsenide; Heating; Optical amplifiers; Signal to noise ratio; Stimulated emission; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104776
Filename
6104776
Link To Document