Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates

Radiation-induced pulse noises called single-event transients, SETs, are becoming a serious soft-error source for logic VLSIs. Analytical models explicitly expressing the relationship between the pulse width and radiation/device/circuit parameters are desired as guidelines to develop optimized countermeasures. A simple mathematical expression is devised for characterizing SET pulse widths in SOI CMOS technologies. It is based on the physical mechanisms of the SETs and on the idea of Moll´s storage time. Device simulations demonstrate that the expression explains pulse-width trends properly for large radiation-induced noise charges.