DocumentCode
2670182
Title
Effects of strain on carrier recombination in GaN quantum dots
Author
Neogi, A. ; Everitt, H.O. ; Morkoc, H. ; Kuroda, T. ; Tackeuchi, A.
Author_Institution
Dept. of Phys., North Texas Univ., Denton, TX, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.
Keywords
III-V semiconductors; electron-hole recombination; gallium; photoluminescence; semiconductor quantum dots; time resolved spectra; 20 degC; GaN; GaN quantum dots; carrier recombination; nonradiative recombination channels; room temperature; strain; time-resolved photoluminescence spectroscopy; Buffer layers; Capacitive sensors; Gallium nitride; Optical buffering; Photoluminescence; Polarization; Potential well; Quantum dots; Radiative recombination; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238583
Filename
1276294
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