Title :
Effects of strain on carrier recombination in GaN quantum dots
Author :
Neogi, A. ; Everitt, H.O. ; Morkoc, H. ; Kuroda, T. ; Tackeuchi, A.
Author_Institution :
Dept. of Phys., North Texas Univ., Denton, TX, USA
Abstract :
Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.
Keywords :
III-V semiconductors; electron-hole recombination; gallium; photoluminescence; semiconductor quantum dots; time resolved spectra; 20 degC; GaN; GaN quantum dots; carrier recombination; nonradiative recombination channels; room temperature; strain; time-resolved photoluminescence spectroscopy; Buffer layers; Capacitive sensors; Gallium nitride; Optical buffering; Photoluminescence; Polarization; Potential well; Quantum dots; Radiative recombination; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238583
