Title :
Alpha particle and neutron-induced soft error rates and scaling trends in SRAM
Author :
Kobayashi, Hajime ; Kawamoto, Nobutaka ; Kase, Jun ; Shiraish, Ken
Author_Institution :
Sony Corp., Atsugi, Japan
Abstract :
We performed underground real-time tests to obtain alpha particle-induced soft error rates (alpha-SER) with high accuracies for SRAMs with 180 nm - 90 nm technologies and studied the scaling trend of alpha-SERs. In order to estimate the maximum permissive rate of alpha emission from package resin, the alpha-SER was compared to the neutron-induced soft error rate (n-SER) obtained from accelerated tests. We found that as devices are scaled down, the alpha-SER increased while the n-SER slightly decreased, and that the alpha-SER could be greater than the n-SER in 90 nm technology even when the ultra-low-alpha (ULA) grade, with the alpha emission rate < 1 times 10-3 cm-2h-1, was used for package resin. We also performed computer simulations to estimate scaling trends of both alpha-SER and n-SERup to 45 nm technologies, and noticed that the alpha-SER decreased from 65 nm technology while the n-SER increased from 45 nm technology due to direct ionization from the protons generated in the n + Si nuclear reaction.
Keywords :
SRAM chips; alpha-particle effects; electronics packaging; ionisation; life testing; neutron effects; SRAM scaling; accelerated test; alpha particle emission induced soft error rates; alpha particle emission permissive rate; alpha-SER scaling trend; direct ionization; n-SER scaling trend; neutron-induced soft error rates; nuclear reaction; package resin; proton generation; size 90 nm; ultra-low-alpha grade; Alpha particles; Computer simulation; Error analysis; Ionization; Life estimation; Packaging; Performance evaluation; Random access memory; Resins; Testing; SER; SRAM; alpha particle; neutron; package resin; soft error;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173252