Title :
Temperature dependent THz time-domain spectroscopy of carrier dynamics in GaN thin film
Author :
Balci, Soner ; Baughman, William ; Wilbert, David S. ; Butler, Lee ; Kung, Patrick ; Kim, Seongsin M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alabama, Tuscaloosa, AL, USA
Abstract :
We report the complex refractive index, conductivity, and dielectric constants of GaN thin film in the terahertz frequency as a function of temperature using terahertz time-domain spectroscopy. Temperature dependent carrier dynamics and optical properties are observed in the frequency range from 0.3 to 2.0 THz. Temperature dependent complex conductivity is fitted by a Drude model to find changes in relaxation times and plasma frequencies.
Keywords :
III-V semiconductors; electrical conductivity; gallium compounds; permittivity; refractive index; semiconductor thin films; terahertz wave spectra; Drude model; GaN; GaN thin film; carrier dynamics; complex refractive index; conductivity; dielectric constants; frequency 0.3 THz to 2.0 THz; optical properties; plasma frequencies; relaxation times; temperature dependent carrier dynamics; temperature dependent complex conductivity; temperature dependent thz time-domain spectroscopy; Conductivity; Gallium nitride; Plasma temperature; Refractive index; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104785
