Title :
Compensation of operation-related FMAX degradation by adaptive control of circuit operating voltage
Author :
Wiatr, M.A. ; Heller, R. ; Hoentschel, J. ; Geilenkeuser, R. ; Wong, S.J. ; Shah, V. ; Mantei, T. ; Majer, M. ; Pruefer, E. ; Scott, C. ; Rodes, T. ; Wieczorek, K. ; Horstmann, M. ; Greenlaw, D.
Author_Institution :
Technol. Integration, AMD Saxony LLC & Co. KG, Dresden, Germany
Abstract :
The impact of HCI and NBTI on device DC, Ring Oscillator (RO) AC as well as on the degradation of product operating frequency (FMAX) has been extensively studied. We have developed a method, which allows the compensation of HCI/NBTI-related device and product performance degradation by adaptive control of operating voltage and power for the integrated circuit. Depending on the constraints applied to the product reliability and power, full or partial performance compensation is possible applying our new approach. The win in guard bands and thus a product classification advantage is demonstrated on one of our high-performance microprocessors.
Keywords :
adaptive control; integrated circuit reliability; voltage control; HCI/NBTI-related device; adaptive control; adaptive correction; circuit operating voltage; guard bands; high-performance microprocessors; integrated circuit; operation-related FMAX degradation; product classification advantage; product performance degradation; product reliability; ring oscillator; Adaptive control; Degradation; Frequency; Human computer interaction; Niobium compounds; Ring oscillators; Stress; Temperature; Titanium compounds; Voltage; FMAX degradation; adaptive correction; operating voltage; power; product reliability;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173261
