DocumentCode :
2670441
Title :
Study of piezoelectric aluminum nitride thin film by RF magnetron sputtering
Author :
Wu, Shih-Jeh ; Shen, Ting-Wai
Author_Institution :
Dept. of Mech. Eng., I-Shou Univ., Kaohsiung
fYear :
0
fDate :
0-0 0
Firstpage :
444
Lastpage :
449
Abstract :
Aluminum nitride (AIN) piezoelectric thin film is very popular in RF resonators and bio-sensors. In this paper the AIN thin film is studied by RF sputtering system. The crystal growth of c axis (002) is important for good electric properties and the effect of different parameters are studied in this paper including N2/Ar ratio, sputtering pressure
Keywords :
aluminium compounds; biosensors; crystal growth; nitrogen compounds; piezoelectric materials; piezoelectric thin films; resonators; sputtering; N2-Ar; RF magnetron sputtering; RF resonators; bio-sensors; crystal growth; piezoelectric aluminum nitride thin film; Aluminum nitride; Atomic force microscopy; Crystallization; Electrodes; Piezoelectric films; Radio frequency; Rough surfaces; Scanning electron microscopy; Sputtering; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Robotics and Biomimetics (ROBIO). 2005 IEEE International Conference on
Conference_Location :
Shatin
Print_ISBN :
0-7803-9315-5
Type :
conf
DOI :
10.1109/ROBIO.2005.246308
Filename :
1708784
Link To Document :
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