Title :
K-Band Power GaAs FETS
Author :
Rosenheck, L.S. ; Herstein, D. ; Drukier, I.
Abstract :
This paper will report on the structure and performance of GaAs FETs developed for K-band applications. A power output of 27dBm was obtained with 5dB gain at 21GHz. A novel low loss waveguide to microstrip transition was used in the measurement. Its design will be described.
Keywords :
FETs; Fingers; Frequency; Gallium arsenide; K-band; Microstrip; Power generation; Surface resistance; Thermal resistance; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129809
