• DocumentCode
    2670542
  • Title

    Material analysis with a helium ion microscope

  • Author

    Scipioni, Larry ; Thompson, William ; Sijbrandij, Sybren ; Ogawa, Shinichi

  • Author_Institution
    Carl Zeiss SMT, Inc., Peabody, MA, USA
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    317
  • Lastpage
    321
  • Abstract
    The helium ion microscope, a new imaging technology, is being applied also to sample modification. The application opportunity exists due to the extreme high resolution and the ability to gather analytical data as well as images. Possible applications include inspection, elemental analysis, and dopant concentration measurements.
  • Keywords
    doping profiles; ion microscopy; dopant concentration; elemental analysis; helium ion microscope; sample modification; Dielectric materials; Dielectric substrates; Electron beams; Health information management; Helium; Ion beams; Ion sources; Optical films; Optical sensors; Scanning electron microscopy; HIM; backscattering; dopant; helium ion; imaging; microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173271
  • Filename
    5173271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2670542