DocumentCode :
2670542
Title :
Material analysis with a helium ion microscope
Author :
Scipioni, Larry ; Thompson, William ; Sijbrandij, Sybren ; Ogawa, Shinichi
Author_Institution :
Carl Zeiss SMT, Inc., Peabody, MA, USA
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
317
Lastpage :
321
Abstract :
The helium ion microscope, a new imaging technology, is being applied also to sample modification. The application opportunity exists due to the extreme high resolution and the ability to gather analytical data as well as images. Possible applications include inspection, elemental analysis, and dopant concentration measurements.
Keywords :
doping profiles; ion microscopy; dopant concentration; elemental analysis; helium ion microscope; sample modification; Dielectric materials; Dielectric substrates; Electron beams; Health information management; Helium; Ion beams; Ion sources; Optical films; Optical sensors; Scanning electron microscopy; HIM; backscattering; dopant; helium ion; imaging; microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173271
Filename :
5173271
Link To Document :
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