DocumentCode :
2670558
Title :
2-18 GHz, High-Efficiency, Medium-Power GaAs FET Amplifiers
Author :
Nelson, S.R. ; Macksey, H.M.
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
31
Lastpage :
33
Abstract :
A GaAs FET amplifier using a 600 mu m gate width device has achieved ~ 300 mW output with 20-25% power-added efficiency across 2 to 18 GHz. With a 1350 mu m FET, 0.5 W output power was obtained from 7 to 16.5 GHz. Extending its large-signal performance to 2 GHz appears feasible.
Keywords :
Broadband amplifiers; FETs; Frequency; Gain; Gallium arsenide; Inductance; Laboratories; Operational amplifiers; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129810
Filename :
1129810
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2670558
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