Title :
Plated Source Bridge (PSB) GaAs Power FET with Improved Reliability
Author :
Suzuki, T. ; Kobiki, M. ; Wataze, M. ; Segawa, K. ; Irie, M.
Abstract :
Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.
Keywords :
Bridge circuits; Electric resistance; Electrodes; FETs; Flip chip; Gallium arsenide; Gold; Production; Resists; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129811
