DocumentCode :
2670582
Title :
Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band
Author :
Laighton, D. ; Sasonoff, J. ; Selin, J.
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
37
Lastpage :
39
Abstract :
Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.
Keywords :
Calibration; Capacitors; Circuits; Fabrication; Power amplifiers; Radio frequency; Resonance; Testing; Thin film inductors; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129812
Filename :
1129812
Link To Document :
بازگشت