Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed, comparing different gate electrodes and their temperature-dependence.