Title :
A Microwave Model for the Dual-Gate GaAs MESFET
Abstract :
A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET´s is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.
Keywords :
Decision support systems; Equations; Flowcharts; Gallium arsenide; Impedance; Intrusion detection; MESFETs; Microwave FETs; Microwave circuits; Microwave devices;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129814
