DocumentCode
2670605
Title
A Microwave Model for the Dual-Gate GaAs MESFET
Author
Mau, G.S.F.
fYear
1981
fDate
15-19 June 1981
Firstpage
43
Lastpage
45
Abstract
A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET´s is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.
Keywords
Decision support systems; Equations; Flowcharts; Gallium arsenide; Impedance; Intrusion detection; MESFETs; Microwave FETs; Microwave circuits; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129814
Filename
1129814
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