Title :
Ion-Implanted K-Band GaAs Power FET
Author :
Taylor, G.C. ; Liu, S.G. ; Bechtle, D.
Abstract :
This paper reports the performance up to 26 GHz from a GaAs power FET produced by ion implantation. At 15 GHz, an output power of 250 mW at 3 dB gain with 27.4% power-added efficiency was obtained. At 26 GHz, 55 mW at 3 dB gain with 5% power-added efficiency was demonstrated. Capless annealing and a novel lift-off gate fabrication scheme was employed.
Keywords :
Annealing; Chemicals; Chromium; Etching; FETs; Fabrication; Gain; Gallium arsenide; K-band; Resists;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129815
