DocumentCode
2670650
Title
Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics
Author
Hirano, Izumi ; Nakasaki, Yasushi ; Fukatsu, Shigeto ; Masada, Akiko ; Mitani, Yuichiro ; Goto, Masakazu ; Nagatomo, Koji ; Inumiya, Seiji ; Sekine, Katsuyuki
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2009
fDate
26-30 April 2009
Firstpage
355
Lastpage
361
Abstract
The slope parameter of Weibull plot of Tbd, beta, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore beta of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to beta in terms of the origin of large beta for metal-gate/high-k.
Keywords
Weibull distribution; field effect transistors; hafnium compounds; silicon compounds; HfSiON; Weibull distribution; bipolar stress; gate dielectrics; metal gate electrode; n-FETs; Dielectric breakdown; Dielectric materials; Dielectric measurements; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Stress measurement; Voltage; Weibull distribution; HfSiON; Metal-gate; TDDB; component; high-k;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173278
Filename
5173278
Link To Document