• DocumentCode
    2670747
  • Title

    Vth fluctuations due to random telegraph signal on work function control in Hf-doped silicate gate stack

  • Author

    Shimizu, T. ; Kato, I. ; Yokogawa, S. ; Kitagaki, T. ; Taniguchi, J. ; Suzuki, T. ; Tsuboi, T.

  • Author_Institution
    Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    389
  • Lastpage
    394
  • Abstract
    We investigated Vth fluctuations due to random telegraph signal (RTS) on gate work function control in Hf-doped silicate gate stack compared with the conventional impurity doping. Complex RTS were recognized for both n- and p-MOSFET. The WFC does not appreciably affect Vth fluctuations for n-and p-MOSFET. However, dopant contributes to Vth fluctuation, especially for the p-MOSFET. We found it is caused by change in Vfb fluctuation due to increase of the trap density.
  • Keywords
    MOSFET; hafnium; silicon compounds; work function; SiO2:Hf; Vth fluctuations; gate stack; impurity doping; random telegraph signal; work function control; Channel bank filters; Doping; Fluctuations; Hafnium; Impurities; MOSFET circuits; Telegraphy; Time measurement; Velocity measurement; Voltage; Hf-doped silicate; Random telegraph signal; Vfb fluctuation; Work function control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173284
  • Filename
    5173284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2670747