Title :
Vth fluctuations due to random telegraph signal on work function control in Hf-doped silicate gate stack
Author :
Shimizu, T. ; Kato, I. ; Yokogawa, S. ; Kitagaki, T. ; Taniguchi, J. ; Suzuki, T. ; Tsuboi, T.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
Abstract :
We investigated Vth fluctuations due to random telegraph signal (RTS) on gate work function control in Hf-doped silicate gate stack compared with the conventional impurity doping. Complex RTS were recognized for both n- and p-MOSFET. The WFC does not appreciably affect Vth fluctuations for n-and p-MOSFET. However, dopant contributes to Vth fluctuation, especially for the p-MOSFET. We found it is caused by change in Vfb fluctuation due to increase of the trap density.
Keywords :
MOSFET; hafnium; silicon compounds; work function; SiO2:Hf; Vth fluctuations; gate stack; impurity doping; random telegraph signal; work function control; Channel bank filters; Doping; Fluctuations; Hafnium; Impurities; MOSFET circuits; Telegraphy; Time measurement; Velocity measurement; Voltage; Hf-doped silicate; Random telegraph signal; Vfb fluctuation; Work function control;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173284
