Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

Author

Yeoh, Yun Young ; Suk, Sung Dae ; Li, Ming ; Yeo, Kyoung Hwan ; Kim, Dong-Won ; Jin, Gyoyoung ; Oh, Kyoungsuk

Author_Institution

Adv. Technol. Dev. Team 1, R&D Center, Samsung Electron. Co., Yongin, South Korea

fYear

2009

fDate

26-30 April 2009

Firstpage

400

Lastpage

404

Abstract

Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst V_D for 10 years guaranty, 1.31 V, satisfies requirement of ITRS roadmap.

Keywords

MOSFET; elemental semiconductors; hot carriers; nanoelectronics; nanowires; semiconductor device reliability; silicon; technological forecasting; ITRS roadmap; Si; gate dielectrics; gate-all-around twin FET; hot carrier reliability; nanowire channel; nanowire field effect transistor; size 2 nm; voltage 1.31 V; Degradation; Dielectrics; Etching; FETs; Germanium silicon alloys; Hot carriers; Shape; Silicon germanium; Stress; Tin; GAA TSNWFET; GNOx; ISSG; RTO; gate length; hot carrier; nanowire channel size; oxide thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173286

Filename

5173286