DocumentCode
2670787
Title
Avalanche, joule breakdown and hysteresis in carbon nanotube transistors
Author
Pop, Eric ; Dutta, Sumit ; Estrada, David ; Liao, Albert
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2009
fDate
26-30 April 2009
Firstpage
405
Lastpage
408
Abstract
We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/mum), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.
Keywords
carbon nanotubes; hysteresis; nanoelectronics; nanotube devices; pulse measurement; Joule breakdown; avalanche behavior; carbon nanotube transistor; hysteresis effect; pulse measurement; Avalanche breakdown; Carbon nanotubes; Electrodes; Hysteresis; Nanoscale devices; Nanotube devices; Pulse measurements; Semiconductivity; Semiconductor device breakdown; Voltage; avalanche; breakdown; carbon nanotube; hysteresis;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173287
Filename
5173287
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