Title :
Avalanche, joule breakdown and hysteresis in carbon nanotube transistors
Author :
Pop, Eric ; Dutta, Sumit ; Estrada, David ; Liao, Albert
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/mum), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.
Keywords :
carbon nanotubes; hysteresis; nanoelectronics; nanotube devices; pulse measurement; Joule breakdown; avalanche behavior; carbon nanotube transistor; hysteresis effect; pulse measurement; Avalanche breakdown; Carbon nanotubes; Electrodes; Hysteresis; Nanoscale devices; Nanotube devices; Pulse measurements; Semiconductivity; Semiconductor device breakdown; Voltage; avalanche; breakdown; carbon nanotube; hysteresis;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173287
