Hot carrier effects in trench-based integrated power transistors

Author

Moens, P. ; Roig, J. ; Desoete, B. ; Bauwens, F. ; Tack, M.

Author_Institution

Corp. R&D, Power Technol. Center, ON Semicond. Belgium, Oudenaarde, Belgium

fYear

2009

fDate

26-30 April 2009

Firstpage

416

Lastpage

420

Abstract

This paper reports for the first time on anomalous hot carrier effects observed in vertically integrated trench-based (TB-MOS) power transistors. The avalanche current reaches a maximum at intermediate drain voltage, and decreases for increasing drain voltage. The hot carrier lifetime of the transistors yields a minimum at intermediate drain voltage, and not at the maximum drain voltage. Charge pumping experiments enable to locate the degradation in the TB-MOS. A degradation model is proposed.

Keywords

carrier lifetime; hot carriers; isolation technology; power MOSFET; semiconductor device models; TB-MOS power transistor degradation model; avalanche current; charge pumping experiments; hot carrier effects; hot carrier lifetime; integrated trench-based power transistor; intermediate drain voltage; trench isolation technology; Automotive applications; CMOS technology; Circuits; Hot carrier effects; Isolation technology; Power transistors; Qualifications; Temperature; Thermal stresses; Voltage; MOS; component; hot carrier; power; trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173289

Filename

5173289