Title :
Hot carrier stress degradation modes in p-type high voltage LDMOS transistors
Author :
Enichlmair, H. ; Park, J.M. ; Carniello, S. ; Loeffler, B. ; Minixhofer, R. ; Levy, M.
Author_Institution :
Process Dev. & Implementation Dept., Austriamicrosystems AG, Unterpremstaetten, Austria
Abstract :
The hot carrier stress induced device degradation of a p-type LDMOS high voltage transistor is investigated at different stress conditions. The influence of shallow trench corner rounding and carbon ion implantation into the shallow trench region is discussed. Numerical device simulations, charge pumping measurements and electrical characterisations are used for these investigations.
Keywords :
MOSFET; hot carriers; ion implantation; numerical analysis; stress analysis; carbon ion implantation; charge pumping measurement; electrical characterisation; hot carrier stress degradation modes; numerical device simulation; p-type high voltage LDMOS transistors; shallow trench corner rounding; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Hot carriers; Ion implantation; Numerical simulation; Stress; Voltage; NBTI; STI; charge pumping; high-voltage; hot carrier; p-type LDMOS;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173291
