TDDB evaluations and modeling of very high-voltage (10kV) capacitors

Time-Dependent Dielectric Breakdown (TDDB) data for very thick (8 um) silica-based dielectrics is reported at relatively low fields (< 5 MV/cm) but at extremely high voltages (up to 4000 V). TDDB data was taken across a wide range of dielectric thicknesses ranging from 38 Aring to 8 mum (80,000 Aring). Consistent with the TDDB results generally reported for thin films, a thickness-independent effective dipole moment of ~13e Aring was concluded from the testing data. TDDB data is also presented for stacked dielectrics structures (Nitride/Silica) which tend to show a strong polarity dependence, depending on whether electron injection is into the nitride or oxide layer. While the time to failure is polarity dependent, the effective dipole moment is independent of polarity.