Title :
Void nucleation and growth contributions to the critical current density for failure of Cu vias
Author :
Oates, A.S. ; Lin, M.H.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
We investigate the critical current density for electromigration failure, jc, as a function of voiding failure mode for Cu dual damascene vias. We demonstrate experimentally the variation of (jL) product with via failure mode showing that it is not possible to characterize vias by a single (jL). We suggest that, in general, jc for failure is determined by the sum of void nucleation and growth components, and we present a model for jc based on these concepts.
Keywords :
copper; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; nucleation; voids (solid); Cu; circuit reliability; copper interconnects; critical current density; dual damascene vias; electromigration failure; void nucleation; voiding failure mode; Anodes; Cathodes; Compressive stress; Conductors; Critical current density; Current density; Electromigration; Integrated circuit interconnections; Steady-state; Tensile stress;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173296
