DocumentCode
2671039
Title
4-8 Ghz High Power Cascadable Pacraged GaAs FET Amplifier
Author
Yamamura, Shigefumi ; Shigaki, M. ; Hidaka, Naoya ; Ishikawa, Hiroshi ; Fukuta, Masahiro
fYear
1981
fDate
15-19 June 1981
Firstpage
123
Lastpage
125
Abstract
A 4-8 GHz 1 W GaAs FET amplifier module in a 6 x 16 x 3.5 mm ceramic package with 6 terminals has been developed. The modules can be directly cascaded quite easily since they have standardized interfaces.
Keywords
Ceramics; Electromagnetic heating; Gallium arsenide; High power amplifiers; Impedance; Microwave FETs; Microwave circuits; Packaging; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129842
Filename
1129842
Link To Document