DocumentCode :
2671039
Title :
4-8 Ghz High Power Cascadable Pacraged GaAs FET Amplifier
Author :
Yamamura, Shigefumi ; Shigaki, M. ; Hidaka, Naoya ; Ishikawa, Hiroshi ; Fukuta, Masahiro
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
123
Lastpage :
125
Abstract :
A 4-8 GHz 1 W GaAs FET amplifier module in a 6 x 16 x 3.5 mm ceramic package with 6 terminals has been developed. The modules can be directly cascaded quite easily since they have standardized interfaces.
Keywords :
Ceramics; Electromagnetic heating; Gallium arsenide; High power amplifiers; Impedance; Microwave FETs; Microwave circuits; Packaging; Power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129842
Filename :
1129842
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2671039
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