• DocumentCode
    2671065
  • Title

    A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band

  • Author

    Sokolov, V. ; Bennett, R.C.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.
  • Keywords
    Bandwidth; Bonding; FETs; Frequency; Gain; Impedance; Inductance; Packaging; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129844
  • Filename
    1129844