Title :
A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band
Author :
Sokolov, V. ; Bennett, R.C.
Abstract :
Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.
Keywords :
Bandwidth; Bonding; FETs; Frequency; Gain; Impedance; Inductance; Packaging; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129844
