Title :
Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers
Author :
Dietz, R.J.B. ; Gerhard, M. ; Boettcher, J. ; Kuenzel, H. ; Koch, M. ; Sartorius, B. ; Schell, M.
Author_Institution :
Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical multilayers; photoconducting switches; photoconductivity; terahertz wave generation; InGaAs-InAlAs; MBE; carrier mobility; multinanolayer structures; optical power-to-THz conversion efficiency; photoconductive THz generation; photoconductive layers; photoconductive switches; trapping layers; wavelength 1.5 mum; Absorption; Charge carrier processes; Indium gallium arsenide; Optical pulses; Optical receivers; Stimulated emission;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104831
