The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability

Author

Linder, Barry P. ; Cartier, Eduard ; Krishnan, Siddarth ; Stathis, James H. ; Kerber, Andreas

Author_Institution

IBM T.J Watson Res. Center, Yorktown Heights, NY, USA

fYear

2009

fDate

26-30 April 2009

Firstpage

510

Lastpage

513

Abstract

This paper explores the trade-offs of interface layer (IL) thickness, interface growth process, and interface nitrogen content on NFET dielectric reliability using ramp breakdown tests. The median breakdown voltage and the Weibull slope correlate strongly with the gate leakage irrespective of the IL process. Both reliability parameters are predominately modulated by the IL thickness.

Keywords

MOSFET; Weibull distribution; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; NFET dielectric reliability; Weibull distribution slope; gate leakage effect; high-k-metal gate stacks; interface growth process; interface layer thickness effect; interface nitrogen content; median breakdown voltage; ramp breakdown test; Dielectric breakdown; Dielectric devices; Electric breakdown; Gate leakage; High K dielectric materials; High-K gate dielectrics; Nitrogen; Shape; Stress; Voltage; Dielectric breakdown; Hafnium; Ramp Breakdown; Semiconductor device reliability; component;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173305

Filename

5173305