Title :
The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
Author :
Linder, Barry P. ; Cartier, Eduard ; Krishnan, Siddarth ; Stathis, James H. ; Kerber, Andreas
Author_Institution :
IBM T.J Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper explores the trade-offs of interface layer (IL) thickness, interface growth process, and interface nitrogen content on NFET dielectric reliability using ramp breakdown tests. The median breakdown voltage and the Weibull slope correlate strongly with the gate leakage irrespective of the IL process. Both reliability parameters are predominately modulated by the IL thickness.
Keywords :
MOSFET; Weibull distribution; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; NFET dielectric reliability; Weibull distribution slope; gate leakage effect; high-k-metal gate stacks; interface growth process; interface layer thickness effect; interface nitrogen content; median breakdown voltage; ramp breakdown test; Dielectric breakdown; Dielectric devices; Electric breakdown; Gate leakage; High K dielectric materials; High-K gate dielectrics; Nitrogen; Shape; Stress; Voltage; Dielectric breakdown; Hafnium; Ramp Breakdown; Semiconductor device reliability; component;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173305
