Title :
ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method
Author :
Ruan, J. ; Papaioannou, G.J. ; Nolhier, N. ; Bafleur, M. ; Coccetti ; Plana, R.
Author_Institution :
CNRS, LAAS, Toulouse, France
Abstract :
The present work investigates the influence of dielectric film deposition method on the charging behavior of RF-MEMS capacitive switches, stressed by electrostatic discharges. A transmission line pulsing generator is used to produce the short transient event. The results show two simplified charging mechanisms influenced by discharges. The comparison between two silicon nitride confirms the effect of the dielectric material deposition method on the reliability of the switches.
Keywords :
dielectric materials; electrostatic discharge; microswitches; pulse generators; stress analysis; transmission lines; ESD stress; RF-MEMS capacitive switches; dielectric films; dielectric material deposition method; electrostatic discharges; silicon nitride; switch reliability; transmission line pulsing generator; Dielectric films; Dielectric materials; Electrostatic discharge; Materials reliability; Power system transients; Radiofrequency microelectromechanical systems; Silicon; Stress; Switches; Transmission lines; RF-MEMS; charging; dielectric material; electrostatic discharge (ESD); reliability;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173312
