ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method

Author

Ruan, J. ; Papaioannou, G.J. ; Nolhier, N. ; Bafleur, M. ; Coccetti ; Plana, R.

Author_Institution

CNRS, LAAS, Toulouse, France

fYear

2009

fDate

26-30 April 2009

Firstpage

568

Lastpage

572

Abstract

The present work investigates the influence of dielectric film deposition method on the charging behavior of RF-MEMS capacitive switches, stressed by electrostatic discharges. A transmission line pulsing generator is used to produce the short transient event. The results show two simplified charging mechanisms influenced by discharges. The comparison between two silicon nitride confirms the effect of the dielectric material deposition method on the reliability of the switches.

Keywords

dielectric materials; electrostatic discharge; microswitches; pulse generators; stress analysis; transmission lines; ESD stress; RF-MEMS capacitive switches; dielectric films; dielectric material deposition method; electrostatic discharges; silicon nitride; switch reliability; transmission line pulsing generator; Dielectric films; Dielectric materials; Electrostatic discharge; Materials reliability; Power system transients; Radiofrequency microelectromechanical systems; Silicon; Stress; Switches; Transmission lines; RF-MEMS; charging; dielectric material; electrostatic discharge (ESD); reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173312

Filename

5173312