Title :
Ultrafast many-body spin interactions in highly excited undoped and n-doped bulk GaAs
Author :
Bratschitsch, R. ; Chen, Z. ; Cundiff, S.T. ; Lau, W.H. ; Flatte, M.E.
Author_Institution :
JILA, Colorado Univ., Boulder, CO, USA
Abstract :
We observe a fundamental difference in the influence of doping electrons and optically excited electrons on the electron g-factor and spin relaxation time T/sub 2/ in undoped and n-doped bulk GaAs.
Keywords :
III-V semiconductors; electron density; electron relaxation time; electron spin polarisation; g-factor; gallium arsenide; high-speed optical techniques; doped bulk GaAs; doping electrons; electron g-factor; optically excited electrons; spin relaxation time; ultrafast many-body spin interactions; undoped bulk GaAs; Electron optics; Gallium arsenide; Magnetic field measurement; Optical devices; Optical polarization; Optical pulses; Optical pumping; Quantum computing; Semiconductor device doping; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.237948
