DocumentCode
2671281
Title
On the contribution of line-edge roughness to intralevel TDDB lifetime in low-k dielectrics
Author
Lloyd, J.R. ; Liu, X-.H. ; Bonilla, G. ; Shaw, T.M. ; Liniger, E. ; Lisi, A.
Author_Institution
IBM TJ Watson Res. Center, Yorktown Heights, NY, USA
fYear
2009
fDate
26-30 April 2009
Firstpage
602
Lastpage
605
Abstract
A TDDB reliability experiment was performed on interdigitated comb structures with intentionally severe line-edge roughness and the results were then compared to a simple theoretical model. It is seen that for the case studied, the predictions of the model do not compare well to the experimental data, but that for some observed cases the effect of reducing spacing between lines is so strong that more substantial defects must be invoked as a source of failure.
Keywords
dielectric materials; electric breakdown; integrated circuit reliability; interdigitated comb structure; intralevel TDDB lifetime; line-edge roughness; low-k dielectrics; time dependent dielectric breakdown; Capacitors; Dielectrics; Integrated circuit reliability; Integrated circuit technology; Microelectronics; Predictive models; Reliability theory; Space technology; Testing; Voltage; LER; Low-k dielectrics; TDDB;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173317
Filename
5173317
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