Title :
CMOS device design-in reliability approach in advanced nodes
Author :
Huard, Vincent ; Parthasarathy, CR ; Bravaix, Alain ; Guerin, Chloe ; Pion, Emmanuel
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
A general framework is proposed to characterize digital library gates for NBTI and HCI ageing effects. Required parameters extraction is demonstrated for practical cases using accurate, state-of-the-art reliability simulation flow. Both NBTI recovery and HCI models are required to accurately assess digital product degradation.
Keywords :
CMOS integrated circuits; hot carriers; semiconductor device reliability; CMOS device design-in reliability approach; HCI ageing effect; NBTI; digital product degradation; hot carrier injection; negative bias temperature instability; parameters extraction; Circuit simulation; Degradation; Hot carrier injection; Human computer interaction; Integrated circuit reliability; Negative bias temperature instability; Niobium compounds; Semiconductor device modeling; Stress; Titanium compounds; AGE function; Design; HCI; ISCAS; NBTI; Reliability;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173321
