Title :
Accurate product lifetime predictions based on device-level measurements
Author :
Nigam, T. ; Parameshwaran, B. ; Krause, G.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Product level lifetime margins, determined by HCI and BTI, are shrinking with scaling. We developed highly accurate device-level HCI degradation models that, together with known BTI models, are able to accurately predict frequency degradation of a ring oscillator. We show that despite substantial relief from HCI damage in balanced switching circuits, HCI degradation still accounts for 40-50% of frequency degradation for a 10-year product life.
Keywords :
MOSFET; hot carriers; oscillators; semiconductor device reliability; silicon compounds; silicon-on-insulator; switching circuits; SiON; balanced switching circuits; bias temperature instability; device-level degradation models; floating body SOI devices; frequency degradation; hot carrier injection; product lifetime predictions; ring oscillator; universal saturation model; Degradation; Frequency; Human computer interaction; Niobium compounds; Predictive models; Ring oscillators; Stress; Switching circuits; Titanium compounds; Voltage; HCI; product degradation; ring oscillators;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173322
