Title :
A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions
Author :
Shrivastava, Mayank ; Schneider, Jens ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (~2X) in failure threshold (IT2).
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; 3D device modeling; DeNMOS devices; ESD; electrostatic discharge; failure threshold; filamentation phase; power dissipation; reliability; space charge; thermal runaway; CMOS process; CMOS technology; Circuit simulation; Electrostatic discharge; MOS devices; Power dissipation; Protection; Space charge; Space technology; Temperature;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173327
