DocumentCode
2671561
Title
Probing the electronic structure of defective oxide: an EELS approach
Author
Li, X. ; Zhang, G. ; Tung, C.H. ; Pey, K.L.
Author_Institution
Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
fYear
2009
fDate
26-30 April 2009
Firstpage
692
Lastpage
695
Abstract
STEM/EELS were used to probe the localized electronic structures of the defective oxide. Our results show that the electronic structures of breakdown oxide are similar to the oxygen deficient suboxide with formation of oxygen vacancies. The understanding of the basic material properties will be helpful for the improvements of the state-of-the-art devices.
Keywords
band structure; electric breakdown; electron energy loss spectra; localised states; scanning-transmission electron microscopy; silicon compounds; vacancies (crystal); EELS; STEM; SiO2; breakdown; defective oxide; electron energy loss spectroscopy; localized electronic structures; monochromatic scanning transmission electron microscopy; oxygen vacancies; Dielectric breakdown; Dielectric losses; Dielectric materials; Electric breakdown; Electrons; Energy loss; Energy resolution; Microelectronics; Photonic band gap; Plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173331
Filename
5173331
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