Title :
Probing the electronic structure of defective oxide: an EELS approach
Author :
Li, X. ; Zhang, G. ; Tung, C.H. ; Pey, K.L.
Author_Institution :
Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
STEM/EELS were used to probe the localized electronic structures of the defective oxide. Our results show that the electronic structures of breakdown oxide are similar to the oxygen deficient suboxide with formation of oxygen vacancies. The understanding of the basic material properties will be helpful for the improvements of the state-of-the-art devices.
Keywords :
band structure; electric breakdown; electron energy loss spectra; localised states; scanning-transmission electron microscopy; silicon compounds; vacancies (crystal); EELS; STEM; SiO2; breakdown; defective oxide; electron energy loss spectroscopy; localized electronic structures; monochromatic scanning transmission electron microscopy; oxygen vacancies; Dielectric breakdown; Dielectric losses; Dielectric materials; Electric breakdown; Electrons; Energy loss; Energy resolution; Microelectronics; Photonic band gap; Plasmons;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173331
