Title :
Relaxation and dephasing of multiexcitons in electrically-pumped quantum dots
Author :
Borri, P. ; Langbein, W. ; Schneider, Scott ; Woggon, U. ; Sellin, R.L. ; Ouyang, D. ; Bimberg, D.
Author_Institution :
Dortmund Univ., Germany
Abstract :
The population relaxation and dephasing of multiexcitonic transitions in InGaAs quantum dots embedded in the active region of an electrically-pumped semiconductor optical amplifier are measured in the temperature range from 10 K to 300 K.
Keywords :
III-V semiconductors; biexcitons; charge injection; gallium arsenide; indium compounds; interface states; multiwave mixing; phonon-exciton interactions; semiconductor quantum dots; time resolved spectra; 10 to 300 K; InGaAs; InGaAs quantum dots; differential transmission spectroscopy; electrically-pumped quantum dots; four-wave mixing; multiexciton dephasing; multiexcitonic transitions; population relaxation; semiconductor optical amplifier; Indium gallium arsenide; Nonlinear optics; Optical devices; Quantum computing; Quantum dot lasers; Quantum dots; Stimulated emission; Temperature distribution; Temperature measurement; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.237993
