Title :
Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm
Author :
Lo, V.L. ; Pey, K.L. ; Ranjan, R. ; Tung, C.H. ; Shih, J.R. ; Wu, Kenneth
Author_Institution :
Sch. of EEE, NTU, Singapore, Singapore
Abstract :
The saturation of a critical gate voltage at 2-2.4 V for SiON with thickness < 1.6 nm (EOT < 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal voltages. As a result, the post-BD gate leakage degradation rate, which is extrapolated from a high voltage using the conventional approach, is highly overestimated, warranting one to revise the post-BD reliability assessment.
Keywords :
MOSFET; dielectric thin films; nitrogen compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; MOSFET; SiON; critical gate voltage; digital breakdown; extrapolation; post-breakdown reliability margin; ultrathin gate dielectric; voltage 2 V to 2.4 V; Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Gate leakage; Leakage current; Low voltage; MOSFET circuits; Manufacturing; Stress; Gate oxide breakdown; progressive breakdown;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173332
