Title :
Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots
Author :
Kim, K. ; Norris, T.B. ; Ghosh, S. ; Singh, J. ; Bhattacharya, P.
Author_Institution :
Center for Ultrafast Opt. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Femtosecond spectroscopy is used to study the transparency conditions in In/sub 0.4/Ga/sub 0.6/As self-organized quantum dots. The spatial degeneracy of excited state is experimentally observed and a multilevel model is shown to be consistent with the temperature-dependent behavior.
Keywords :
III-V semiconductors; carrier density; excited states; gallium arsenide; ground states; indium compounds; self-assembly; semiconductor quantum dots; time resolved spectra; transparency; In/sub 0.4/Ga/sub 0.6/As; carrier distributions; excited state; femtosecond spectroscopy; level degeneracy; multilevel model; self-assembled quantum dots; temperature-dependent behavior; transparency; Land surface temperature; Laser modes; Pulse amplifiers; Pulse measurements; Quantum dot lasers; Quantum dots; Spectroscopy; Stationary state; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.237996
