DocumentCode :
2671616
Title :
Carrier dynamics in ultrathin films of semimetal Bismuth studied with terahertz time-domain spectroscopy
Author :
Yokota, K. ; Takeda, J. ; Han, G. ; McCarthy, D. ; Nagao, T. ; Kitajima, M. ; Katayama, I.
Author_Institution :
Dept. of Phys., Yokohama Nat. Univ., Yokohama, Japan
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
The thickness dependence of the terahertz absorption in Bi(001) ultrathin films has been investigated. Both the average carrier density and the damping constant of the plasmon increase as the thickness becomes thinner. The results are consistent with the existence of the surface metallic states.
Keywords :
bismuth; carrier density; semimetallic thin films; surface plasmons; terahertz spectroscopy; Bi; average carrier density; carrier dynamics; plasmon damping constant; semimetal bismuth; surface metallic states; terahertz absorption; terahertz time-domain spectroscopy; thickness dependence; ultrathin films; Bismuth; Charge carrier density; Damping; Dielectric constant; Films; Plasmas; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104858
Filename :
6104858
Link To Document :
بازگشت