Strain induced buffer layer defects in GaN HFETs and their evolution during reliability testing

Author

Li, Yinsin ; Krishnan, M. ; Salemi, S. ; Paradee, G. ; Christou, A.

Author_Institution

Mater. Sci. & Eng. Dept., Univ. of Maryland, College Park, MD, USA

fYear

2009

fDate

26-30 April 2009

Firstpage

718

Lastpage

721

Abstract

The reliability physics of GaN HFETs has been investigated in order to identify strain related traps originating at the GaN/SiC substrate interface. The buffer layers investigated were deposited by MBE techniques at a series of growth temperatures and thicknesses so as to attain buffer layers with variable trap density. Heterojunction transistors (HFETs) based on AlGaN/GaN heterostructures have been modeled and the results are described in this paper.

Keywords

III-V semiconductors; aluminium compounds; crystal defects; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device reliability; semiconductor device testing; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; GaN-SiC; HFET; MBE techniques; heterojunction transistors; reliability testing; semiconductor heterostructures; strain induced buffer layer defects; trap density; Buffer layers; Capacitive sensors; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Physics; Silicon carbide; Temperature; Testing; Nitrides; compound semiconductors; heterojunction degradation; trapping mechanisms;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173336

Filename

5173336