Title :
Temperature-dependent conductivity of Mg-doped amorphous silicon film using terahertz time-domain spectroscopy
Author :
Tapia, A.K.G. ; Uchino, T. ; Tominaga, K.
Author_Institution :
Grad. Sch. of Sci., Kobe Univ., Kobe, Japan
Abstract :
The temperature-dependent conductivity of Mg-doped amorphous silicon film on sapphire substrate was studied by terahertz (THz) time-domain spectroscopy. The complex conductivity showed characteristics of charge localizations. The complex conductivity was fitted by the Drude-Smith model. The relaxation time increased at higher temperatures implying that mobility also increased. Lastly, plasma frequency, proportional to carrier concentration, appeared to be constant with temperature.
Keywords :
magnesium; silicon; terahertz spectroscopy; Drude-Smith model; Si:Mg; amorphous silicon film; plasma frequency; sapphire substrate; temperature-dependent conductivity; terahertz time-domain spectroscopy; Conductivity; Films; Mathematical model; Plasma temperature; Spectroscopy; Temperature measurement;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104860
