DocumentCode :
2671679
Title :
Analysis of degradation induced by silicon nitride InP/InGaAs heterojunction bipolar transistors
Author :
Sachelarie, Dan
Author_Institution :
Electr. Eng. Fac., Univ. Valahia, Targoviste, Romania
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
727
Lastpage :
731
Abstract :
The Si3N4 layer deposited by PECVD at 300degC to passivate InP/InGaAs HBTs induces extra charges densities in the peripheral mesa emitter-base heterojunction. The changes in the effective emitter-base doping concentrations were determined by a new method which used the simultaneous analysis of the collector current density and the collector current ideality factor, measured at a fixed emitter-base voltage.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; plasma CVD; semiconductor doping; InP-InGaAs; collector current density; effective emitter-base doping concentrations; emitter-base heterojunction; fixed emitter-base voltage; heterojunction bipolar transistors; temperature 300 degC; Current density; Current measurement; Degradation; Density measurement; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Silicon; Voltage; HBT; InP; SiN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173338
Filename :
5173338
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2671679
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