• DocumentCode
    2671679
  • Title

    Analysis of degradation induced by silicon nitride InP/InGaAs heterojunction bipolar transistors

  • Author

    Sachelarie, Dan

  • Author_Institution
    Electr. Eng. Fac., Univ. Valahia, Targoviste, Romania
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    727
  • Lastpage
    731
  • Abstract
    The Si3N4 layer deposited by PECVD at 300degC to passivate InP/InGaAs HBTs induces extra charges densities in the peripheral mesa emitter-base heterojunction. The changes in the effective emitter-base doping concentrations were determined by a new method which used the simultaneous analysis of the collector current density and the collector current ideality factor, measured at a fixed emitter-base voltage.
  • Keywords
    gallium arsenide; heterojunction bipolar transistors; indium compounds; plasma CVD; semiconductor doping; InP-InGaAs; collector current density; effective emitter-base doping concentrations; emitter-base heterojunction; fixed emitter-base voltage; heterojunction bipolar transistors; temperature 300 degC; Current density; Current measurement; Degradation; Density measurement; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Silicon; Voltage; HBT; InP; SiN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173338
  • Filename
    5173338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2671679