Title :
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs
Author :
Verzellesi, G. ; Faqir, M. ; Chini, A. ; Fantini, F. ; Meneghesso, G. ; Zanoni, E. ; Danesin, F. ; Zanon, F. ; Rampazzo, F. ; Marino, F.A. ; Cavallini, A. ; Castaldini, A.
Author_Institution :
DISMI & DII, Univ. of Modena & Reggio Emilia, Modena, Italy
Abstract :
Buffer traps can induce ldquofalserdquo surface-trap signatures in AlGaN-GaN HEMTs, namely the same type of current-mode DLTS peaks and pulse responses that are generally attributed to surface traps. Device simulations are adopted to clarify the underlying physics. Being aware of the above phenomenon is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in inappropriate correction actions on the technological process.
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium compounds; high electron mobility transistors; semiconductor device reliability; semiconductor device testing; wide band gap semiconductors; AlGaN-GaN; HEMT; buffer trap; current-mode DLTS peak; deep-level transient spectroscopy; false surface-trap signature; high electron mobility transistor; reliability testing; semiconductor device simulation; Aluminum gallium nitride; Degradation; Electron traps; Gallium nitride; HEMTs; Hydrogen; MODFETs; Physics; Space technology; Testing; DLTS; Deep levels; GaN; HEMT; Traps; gate lag;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173339