Title :
V-Band GaAs Gunn Diode
Author :
Chen Xiaojian ; Deng Yanmao ; Huang Zhenqi
Abstract :
The contradictions between the thermal parameters and microwave parasitic parameters in mm-wave Gunn diodes can be released by reasonable assumption for the thermal-conducting model of devices and practical analysis of microwave parasitic parameters. The corresponding formulas and curves are derived to carefully design the configuration parameters of the V-band device and its package.
Keywords :
Chemical technology; Circuit stability; Electromagnetic heating; Frequency; Gallium arsenide; Gunn devices; Light emitting diodes; Microwave devices; Microwave oscillators; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129884
