DocumentCode
2671810
Title
Analysis on forward-biased electrostatic-discharge-induced degradation of InP-based buried heterostructure laser diodes
Author
Ichikawa, Hiroyuki ; Matsukawa, Shinji ; Hamada, Kotaro ; Yamaguchi, Akira ; Nakabayashi, Takashi
Author_Institution
Transm. Devices R & D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan
fYear
2009
fDate
26-30 April 2009
Firstpage
764
Lastpage
768
Abstract
We clarified the mechanism of forward-biased electrostatic-discharge-induced degradation of InP-based laser diodes. This degradation was caused by melting of the active layer as a result of light absorption. We observed a reduction in tolerance on aging in uncoated laser diodes. This reduction was suppressed by facet coating.
Keywords
III-V semiconductors; buried layers; electrostatic discharge; indium compounds; integrated optoelectronics; laser reliability; semiconductor lasers; InP; LD reliability; buried heterostructure laser diode; facet coating; forward-biased electrostatic-discharge-induced degradation; light absorption; Aging; Coatings; Degradation; Diode lasers; Electrostatic analysis; Electrostatic discharge; Laboratories; Protection; Testing; Voltage; BH; ESD; InP; LD; aging; degradation; facet coating; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173346
Filename
5173346
Link To Document